m Determine the form of the temperature dependence of the electrical conductivity ne’T (where t = effective collision time) of a
m Determine the form of the temperature dependence of the electrical conductivity ne’T (where t = effective collision time) of a semiconductor in a temperature domain-where the density n of free carriers is constant and the dominant scattering mechanism is Rutherford scattering from a constant and small number of charged impurities.
The binding energy per nucleon in deuterium and helium nuclei are 1.1 MeV and 7.0 MeV, respectively. When two deuterium nuclei fuse to form a helium nucleus the energy released in the fusion is: You Missed A 23.6MeV Your Answer B 2.2 MeV c 28.0MeV D 30.2 MeV
Based on equation Z2 E= -2.178 x 10-18 ] certain n2 conclusions are written. Which of them is not correct? A The negative sign in equation simply means that the energy of electron bound to the nucleus is lower than it would be if the electrons were at the infinite distance from the nucleus Your Answer B Larger the value of n, the larger is the orbit radius C Equation can be used to calculate the change in energy when the electron changes orbit You Missed D = For n= 1, the electron has a more negative energy than it does for n= 6 which means that the electron is more loosely bound in the smallest allowed orbit =