m
Determine the form of the temperature

Question

m
Determine the form of the temperature dependence of the electrical
conductivity
ne’T
(where t = effective collision time) of a semiconductor
in a temperature domain-where the density n of free carriers is constant
and the dominant scattering mechanism is Rutherford scattering from a
constant and small number of charged impurities.

Kunduz · Accepted Answer

()
2
do
ST&mu
here to
V
-
from using Rutherford scattering
(ze²
Cosec
3204 () = R' cosec119
१2
let R= Ze²
fuw 6 = permittivity of semicon
ductor
STEML²
O = scattering angle
New probability per unit time is
dP= N, v do= 21N, 0 R² cosec/)
= 27 MUR? sino do
-Sint(0)
STN, U R² d (1-coso)
(1-coso)
As o=ne²z
where <cosor average
>
SCI
-Coso) a P
af
87N, UR2 [d(1-coso)
d (
2.
S = Tc
(1-coso)
of cosine.
m
1 = {l-6090
८
Tc
omax
Sa
(1-6490
Omin

m Determine the form of the temperature dependence of the electrical conductivity ne’T (where t = effective collision time) of a