Question:

m Determine the form of the temperature dependence of the electrical conductivity ne’T (where t = effective collision time) of a

m
Determine the form of the temperature dependence of the electrical
conductivity
ne’T
(where t = effective collision time) of a semiconductor
in a temperature domain-where the density n of free carriers is constant
and the dominant scattering mechanism is Rutherford scattering from a
constant and small number of charged impurities.

m Determine the form of the temperature dependence of the electrical conductivity ne’T (where t = effective collision time) of a semiconductor in a temperature domain-where the density n of free carriers is constant and the dominant scattering mechanism is Rutherford scattering from a constant and small number of charged impurities.